What grown Amorphous gallium arsenide films?
Essay 7 pages (2043 words)

Amorphous gallium arsenide (GaAs) films were grown on glass substrates by resistive heating technique under a vacuum 7.8×10-5 mbar at room temperature. Samples were annealed in an open atmosphere in tube furnace at 2500C, 2800C and 3200C temperatures. Annealed gallium arsenide deposited films were characterized…

Similar subjects

Related subjects